GSMBTA42

www.DataSheet4U.com ISSUED DATE :2005/08/31 REVISED DATE : G S M B TA 4 2 Description Package Dimensions NP N EP ITAX I AL PL ANAR T RANSI STOR The GSMBTA42 is designed for high voltage transistor. REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD ,unless otherwise noted) Max. 100 100 500 900 3 MHz pF Unit V V V nA nA mV mV IC=100uA, IE=0 IC=1mA, IB=0 IE=100uA, IC=0 VCB=200V, IE=0 VEB=6V, IC=0 IC=20mA, IB=2mA IC=20mA, IB=2mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA VCE=20V, IC=10mA, f=100MHz VCB=20V, IE=0, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Ratings +150 -55~+150 300 300 6 500 350 Unit V V V mA mW Electrical Characteristics(Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. 300 300 6 25 40 40 50 Typ. - Test Conditions GSMBTA42 Page: 1/2 ISSUED DATE :2005/08/31 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semic...