GSMBT5551

www.DataSheet4U.com ISSUED DATE :2005/08/31 REVISED DATE : GSM BT 5551 Description Features NP N EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT5551 is designed for general purpose applications requiring high breakdown voltage. High Collector-Emitter Breakdown Voltage (BVCEO=160V @ IC=1mA) Complementary to GSMBT5401 Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 180 160 6 600 225 Unit V V V mA mW Electrical Characteristics (Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 fT Cob Min. 180 160 6 80 80 30 100 Typ. - ) Max. 50 50 150 200 1 1 250 300 6 Unit V V V nA nA mV mV V V Test Conditions IC=100uA , IE=0 IC=1mA, IB=0 IE=10uA ,IC=0 VCB=120V, IE=0 VEB=4V, IC=0 IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% MHz pF GSMBT5551 Page: 1/2 ISSUED DATE :2005/08/31 REVISED DATE : Characteristics Curve Important Notice: All rights a...