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ISSUED DATE :2004/12/08 REVISED DATE :
GSM BT 1815
Description Package Dimensions
NP N E PITAXI AL...
Description
www.DataSheet4U.com
ISSUED DATE :2004/12/08 REVISED DATE :
GSM BT 1815
Description Package Dimensions
NP N E PITAXI AL P L ANAR T RANS ISTO R
The GSMBT1815 is designed for use in driver stage of AF amplifier and general purpose amplification.
REF. A A1 A2 D E HE
Millimeter Min. Max. 0.80 1.10 0 0.10 0.80 1.00 1.80 2.20 1.15 1.35 1.80 2.40
REF. L1 L b c e Q1
Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 60 50 5 150 225 V V V mA mW Unit
Characteristics
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob
at Ta = 25
Min. 60 50 5 120 25 80 Typ. Max. 100 100 250 1 700 3.5 MHz pF Unit V V V nA nA mV V IC=100uA IC=1mA IE=10uA VCB=60V VEB=5V IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=2mA VCE=6V, IC=150mA VCE=10V, IC=1mA, f=100MHz VCB=10V, f=1MHz * Pulse Test: Pulse Width 380us, Duty Cycle 2% Test Conditions
Classification Of hFE1
Rank Range C4Y 120 - 240 C4G 200 - 400 C4B 350 - 700
1/2
ISSUED DATE :2004/12/08 REVISED DATE :
Characteristics Curve
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