DatasheetsPDF.com

GSC6680

GTM

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/06/27 REVISED DATE :2006/10/02C GSC6680 N-CHANNEL ENHANC...


GTM

GSC6680

File Download Download GSC6680 Datasheet


Description
www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/06/27 REVISED DATE :2006/10/02C GSC6680 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 11m 11.5A The GSC6680 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Description Features *Low On-Resistance *High Vgs Max Rating Voltage *Surface Mount Package Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0 0.40 0.19 6.20 5.00 4.00 8 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 30 ±20 11.5 9.5 50 2.5 0.02 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-amb Value 50 Unit /W GSC6680 Page: 1/5 ISSUED DATE :2005/06/27 REVISED DATE :2006/10/02C Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)