N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Pb Free Plating Product
ISSUED DATE :2006/10/27 REVISED DATE :
GSC4404
N-CHANNEL ENHANCEMENT MODE ...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/10/27 REVISED DATE :
GSC4404
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 24m 8.5A
Description
The GSC4404 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltage as low as 2.5V. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a load switch or in PWM applications. *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic
Features
Package Dimensions
REF. A B C D E F
Millimeter Min. Max.
5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25
REF. M H L J K G
Millimeter Min. Max.
0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
1
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg
Ratings 30 ±12 8.5 7.1 60 2.5 0.02 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-ambient Max. Symbol Rthj-amb Value 50 Unit /W
GSC4404
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ISSUED DATE :2006/10/27 REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source L...
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