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MT47H32M8

Micron Technology
Part Number MT47H32M8
Manufacturer Micron Technology
Description (MT47HxxMx) DDR2 SDRAM
Published Sep 7, 2007
Detailed Description www.DataSheet4U.com 256Mb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM Features • • • • • • • • • • • • • • VDD = +1.8V ±0.1V, V...
Datasheet PDF File MT47H32M8 PDF File

MT47H32M8
MT47H32M8

Overview
www.
DataSheet4U.
com 256Mb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM Features • • • • • • • • • • • • • • VDD = +1.
8V ±0.
1V, VDDQ = +1.
8V ±0.
1V JEDEC standard 1.
8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option Four-bit prefetch architecture Duplicate output strobe (RDQS) option for x8 configuration DLL to align DQ and DQS transitions with CK Four internal banks for concurrent operation Programmable CAS Latency (CL): 3 and 4 Posted CAS additive latency (AL): 0, 1, 2, 3, and 4 WRITE latency = READ latency - 1 tCK Programmable burst lengths: 4 or 8 Adjustable data-output drive strength 64ms, 8,192-cycle refresh On-die termination (ODT) Designation 64M4 32M8 16M16 MT47H64M4–16 ...


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