UPA2680T1E

www.DataSheet4U.com DATA SHEET MOSFET WITH SCHOTTKY BARRIER DIODE μ PA2680T1E N-CHANNEL MOSFET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The μ PA2680T1E is a switching device, which can be driven directly by a 4.5 V power source. The μ PA2680T1E incorporates a MOSFET which features a low on-state resistance and excellent switching characteristics and a low forward voltage Schottky Barrier Diode, and is suitable for applications such as DC/DC converter of portable machine and so on. PIN CONNECTION (Top View) 6 5 4 FEATURES 4.5 V drive available MOSFET Low on-state resistance MOSFET RDS(on)1 = 38 mΩ TYP. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 44 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A) Low forward voltage Schottky Barrier Diode VF = 0.36 V TYP. (IF = 1.0 A) 1 2 3 1: Anode 2: Source/Cathode (Heat sink 2) 3: Gate 4: Drain (Heat sink 1) 5: Source/Cathode (Heat sink 2) 6: Anode ORDERING INFORMATION PART NUMBER PACKAGE 6LD3x3MLP μ PA2680T1E Marking: A2680 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD = ±150 V TYP. (C = 200 pF, R = 0 Ω, Single Pulse) The information in this document is subject to ...