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TIM1011-8L Dataheets PDF



Part Number TIM1011-8L
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description MICROWAVE POWER GaAs FET
Datasheet TIM1011-8L DatasheetTIM1011-8L Datasheet (PDF)

www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-8L TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.0dBm Single Carrier Level „ HIGH POWER P1dB=39.5 dBm at 10.7 GHz to 11.7 GHz „ HIGH GAIN G1dB=6.0 dB at 10.7 GHz to 11.7 GHz „ BROAD BAND INTERNALLY MATCHED FET „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current .

  TIM1011-8L   TIM1011-8L


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