GL195

www.DataSheet4U.com CORPORATION GL195 Description Features ISSUED DATE :2005/10/06 REVISED DATE : PNP SILICON PLANAR MEDIUM POWER TRANSISTOR The GL195 is designed for medium power amplifier applications. -60 Volt VCEO 1 Amp continuous current Complementary to GL194 Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IC IB PD Ratings +150 -55~+150 -80 -60 -5 -1 -2 -200 2 Unit V V V A A mA W Electrical Characteristics (Ta = 25 Symbol BVCBO *BVCEO BVEBO ICBO ICES IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min. -80 -60 -5 100 100 80 15 150 Typ. - , unless otherwise stated) Max. Unit Test Conditions V IC=-100uA , IE=0 V IC=-10mA, IB=0 V IE=-100uA ,IC=0 -100 nA VCB=-60V, IE=0 -100 nA VCES=-60V -100 nA VEB=-4V, IC=0 -0.3 V IC=-500mA, IB=-50mA -0.6 V IC=-1A, IB=-100mA -1.2 V IC=-1A, IB=-100mA -1.0 V VCE=-5V, IC=-1A VCE=-5V, IC=-1mA 300 VCE=-5V, IC=-500mA VCE=-5V, IC=-1A VCE=-5V, IC=-2A MHz VCE=-10V, IC=-50mA, f=100MHz 10 pF VCB=-10V, IE=0, f=1MHz 2% *Measured under pulse condition...