GL156

www.DataSheet4U.com CORPORATION GL156 Description Features ISSUED DATE :2004/12/29 REVISED DATE :2005/08/02B NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR The GL156 is designed for general purpose switching and amplifier applications. 60 Volt VCEO 3 Amp continuous current Low saturation voltage Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Symbol BVCBO *BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT ton toff Cob Min. 80 60 5 70 100 80 40 140 Typ. 0.12 0.43 0.9 0.8 200 200 170 80 175 45 800 Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 80 60 5 3 6 2 Unit V V V A A W Electrical Characteristics(Ta = 25 ,unless otherwise noted) Max. Unit Test Conditions V IC=100uA, IE=0 V IC=10mA, IB=0 V IE=100uA, IC=0 100 nA VCB=60V, IE=0 100 nA VEB=4V, IC=0 0.3 V IC=1A, IB=0.1A 0.6 V IC=3A, IB=0.3A 1.25 V IC=1A, IB=0.1A 1.0 V IC=1A, VCE=2V VCE=2V, IC=50mA 300 VCE=2V, IC=500mA VCE=2V, IC=1A VCE=2V, IC=2A MHz VCE=5V, IC=100mA, f=100MHz ns VCC=10V, IC=500mA, IB1=IB2=50mA 30 pF VCB=10V, f=1MHz 2% *Measured under p...