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C106F Dataheets PDF



Part Number C106F
Manufacturers Motorola
Logo Motorola
Description Silicon Controlled Rectifier
Datasheet C106F DatasheetC106F Datasheet (PDF)

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by C106/D Silicon Controlled Rectifier Reverse Blocking Triode Thyristors . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • • • • Glassivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Hold.

  C106F   C106F


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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA MOTOROLA Order this document by C106/D Silicon Controlled Rectifier Reverse Blocking Triode Thyristors . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • • • • Glassivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability C106 Series * *Motorola preferred devices SCRs 4 AMPERES RMS 50 thru 600 VOLTS G A K A G A K CASE 77-08 (TO-225AA) STYLE 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (RGK = 1 kΩ) C106F (TC = –40° to 110°C) C106A C106B C106D C106M RMS Forward Current (All Conduction Angles) Average Forward Current (TA = 30°C) Peak Non-repetitive Surge Current (1/2 Cycle, 60 Hz, TJ = –40 to +110°C) Circuit Fusing (t = 8.3 ms) Peak Gate Power Average Gate Power Peak Forward Gate Current Symbol VDRM or VRRM Value 50 100 200 400 600 4 2.55 20 1.65 0.5 0.1 0.2 Amps Amps Amps A2s Watt Watt Amp Unit Volts IT(RMS) IT(AV) ITSM I2t PGM PG(AV) IGFM 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, (cont.) positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data © Motorola, Inc. 1995 1 C106 Series MAXIMUM RATINGS — continued Rating Peak Reverse Gate Voltage Operating Junction Temperature Range Storage Temperature Range Mounting Torque(1) Symbol VGRM TJ Tstg — Value 6 –40 to +110 –40 to +150 6 Unit Volts °C °C in. lb. 1. Torque rating applies with use of compression washer (B52200F006). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C. For optimum results, an activated flux (oxide removing) is recommended. THERMAL CHARACTERISTICS (TC = 25°C, RGK = 1 kΩ unless otherwise noted.) Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol RθJC RθJA Max 3 75 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Peak Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, RGK = 1000 Ohms) TJ = 25°C TJ = 110°C Forward “On” Voltage (IFM = 1 A Peak) Gate Trigger Current (Continuous dc) (VAK = 6 Vdc, RL = 100 Ohms) (VAK = 6 Vdc, RL = 100 Ohms, TC = –40°C) Gate Trigger Voltage (Continuous dc) (VAK = 6 Vdc, RL = 100 Ohms, RGK = 1000 Ohms) (VAK = Rated VDRM, RL = 3000 Ohms, RGK = 1000 Ohms, TJ = 110°C) Holding Current (VD = 12 Vdc, RGK = 1000 Ohms) Forward Voltage Application Rate (TJ = 110°C, RGK = 1000 Ohms, VD = Rated VDRM) Turn-On Time Turn-Off Time TJ = 25°C TJ = –40°C TJ = 25°C TJ = –40°C TJ = +110°C IHX Symbol IDRM, IRRM — — VTM IGT — — VGT 0.4 0.5 0.2 0.3 0.4 0.14 — — — — — — — — — 8 1.2 40 0.8 1 — 3 6 2 — — — mA 30 75 200 500 Volts — — — — 10 100 2.2 Min Typ Max Unit µA µA Volts µA dv/dt tgt tq V/µs µs µs P(AV), AVERAGE ON-STATE POWER DISSIPATION (WATTS) FIGURE 1 – AVERAGE CURRENT DERATING 110 100 TC, CASE TEMPERATURE ( °C) 90 80 70 60 50 40 30 20 10 0 .4 .8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 IT(AV) AVERAGE ON-STATE CURRENT (AMPERES) HALF SINE WAVE RESISTIVE OR INDUCTIVE LOAD. 50 to 400 Hz DC FIGURE 2 – MAXIMUM ON-STATE POWER DISSIPATION 10 JUNCTION TEMPERATURE ≈ 110°C 8 HALF SINE WAVE RESISTIVE OR INDUCTIVE LOAD 50 TO 400Hz. DC 6 4 2 0 0 .4 .8 1.2 1.6 2.0 2.4 2.6 3.2 3.6 4.0 IT(AV) AVERAGE ON-STATE CURRENT (AMPERES) 2 Motorola Thyristor Device Data C106 Series Package Interchangeability The dimensional diagrams below compare the critical dimensions of the Motorola C-106 package with competitive devices. It has been demonstrated that the smaller dimensions of the Motorola package make it compatible in most lead-mount and chassis-mount applications. The user is advised to compare all critical dimensions for mounting compatibility. .295 ____ .305 .145 ____ .155 .148 ____ .158 .115 ____ .130 .400 ____ .360 .095 ____ .105 .135 ____ .115 .127 ____ DIA .123 .026 ____ .019 .425 ____ .435 1 2 3 5_ TYP .520 ____ .480 .385 ____ .365 .050 ____ .095 .315 ____ .285 .420 ____ .400 .105 ____ .095 .054 ____ .046 .105 ____ .095 .575 ____ .655 .040 .094 BSC .025 ____ .035 .015 ____ .025 .045 ____ .055 .190 ____ .170 .020 ____ .026 Motorola C-106 Package Competitive C-106 Package Motoro.


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