STN1HNC60

www.DataSheet4U.com N-CHANNEL 600V - 7Ω - 0.4A - SOT-223 PowerMesh™II MOSFET TYPE STN1HNC60 s s s s s STN1HNC60 VDSS 600 V RDS(on) <8Ω ID 0.4 A TYPICAL RDS(on) = 7Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 2 1 SOT-223 2 3 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS AC ADAPTORS AND BATTERY CHARGERS s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 0.4 0.25 1.6 2.5 0.02 3.5 –65 to 150 150 (1)ISD ≤0.4A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX Unit V V V A A A W W/°C V/ns °C °C 1/8 PTOT dv/dt Tstg Tj May 2001 ()Pulse width limited by safe operating area STN1HNC60 THERMAL DATA Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-PC Board Thermal Resistance Junction-ambient Max Maximum Lead Temperature Fo...