(STN1A60 / STN1A80) Bi-Directional Triode Thyristor
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SemiWell Semiconductor Bi-Directional Triode Thyristor
STN1A60/80
Symbol
Features
Repetitive Peak...
Description
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SemiWell Semiconductor Bi-Directional Triode Thyristor
STN1A60/80
Symbol
Features
Repetitive Peak Off-State Voltage : 600/800V R.M.S On-State Current ( IT(RMS)= 1 A ) ◆ High Commutation dv/dt
◆ ◆
○
3.T2
▼ ▲
○
2.Gate
1.T1
○
General Description
This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.
TO-92
1 2 3
Absolute Maximum Ratings
Symbol VDRM IT(RMS) ITSM I2t PGM PG(AV) IGM VGM TJ TSTG Parameter
( TJ = 25°C unless otherwise specified ) Condition Ratings 600 TC = 58 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 1.0 9.1/10 0.41 1.0 0.1 0.5 6.0 - 40 ~ 125 - 40 ~ 150 0.2 800 Units V A A A2s W W A V °C °C g
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass
Apr, 2003. Rev. 3
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
1/6
STN1A60/80
Electrical Characteristics
Symbol Items Conditions VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 1.5 A, Inst. Measurement Ratings Min. Typ. Max. Unit
IDRM VTM I+GT1 I -GT1 I -GT3 I+GT3 V+GT1 V-GT1 V-GT3 V+GT3 VGD (dv/dt)c IH Rth(j-c) Rth(j-a)
Repetitive Peak Off-State Current Peak On-State Voltage I II Gate Trigger Current III IV I II Gate Trigger Voltage III IV Non-Trigge...
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