www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2004/05/24 REVISED DATE :2005/03/04B
GJ9916
N-CHANNEL ENHANCE...
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2004/05/24 REVISED DATE :2005/03/04B
GJ9916
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
18V 25m 35A
The GJ9916 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Single Drive Requirement *Low on-resistance *Capable of 2.5V gate drive *Low drive current
Description
Features
Package Dimensions TO-252
REF. A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,
[email protected] Continuous Drain Current,
[email protected] Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 ID @TC=125 IDM PD @TC=25 Tj, Tstg
Ratings 18 ±12 35 16 90 50 0.4 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.5 110 Unit /W /W
GJ9916
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ISSUED DATE :2004/05/24 REVISED DATE :2005/03/04B
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
unless otherwise specified)
Min. 18 0.5 Typ. 0.03 18 17.5 1.2 7.9 7.3 98 25.6 98...