N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Pb Free Plating Product
ISSUED DATE :2005/02/23 REVISED DATE :2005/12/02B
GJ70L02
N-CHANNEL ENHANC...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/02/23 REVISED DATE :2005/12/02B
GJ70L02
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 9m 66A
The GJ70L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Description
Features
*Simple Drive Requirement *Low Gate Charge *Fast Switching
Package Dimensions TO-252
REF. A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg
Ratings 25 ±20 66 42 210 66 0.53 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-case Rthj-amb Value 1.9 110 Unit /W /W
GJ70L02
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ISSUED DATE :2005/02/23 REVISED DATE :2005/12/02B
Electrical Characteristics (Tj = 25
Parameter Drain-Source Break...
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