GJ5706

www.DataSheet4U.com ISSUED DATE :2005/05/06 REVISED DATE : GJ5706 Description Features NPN EPITAXIAL PLANAR SILICON TRANSISTOR The GJ5706 is designed high current switching applications. *Large current capacitance *Low collector-to-emitter saturation voltage *High-speed switching *High allowable power dissipation Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings (Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current(Pulse) Base Current Junction Temperature Storage Temperature Total Power Dissipation , unless otherwise specified) Symbol Ratings VCBO 80 VCES 80 VCEO 50 VEBO 6 IC 5 ICP 7.5 IB 1.2 Tj +150 TsTG -55 ~ +150 PD 0.8 15 PD(TC=25 ) ) Unit Test Conditions Unit V V V V A A A W W Electrical Characteristics (Rating at Ta=25 Symbol Min. Typ. Max. BVCBO BVCES BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *hFE fT Cob ton (Turn-On Time) tstg (Storage Time) tf (Fall Time) 80 80 50 6 200 - 400 15 35 300 20 1 1 135 240 1.2 560 - V V V V uA uA mV mV V MHz pF ns ns ns IC=10uA, IE=0 IC=100uA, RBE=0 IC=1mA, RBE= IE=10uA, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 lC=1A, IB=50mA lC=2A, IB=100mA lC=2A, IB=100mA VCE=2V, IC=500mA VCE=10V, IC=500mA VCB=10...