2SK4092

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4092 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES Low on-state resistance RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 10 A) Low gate charge QG = 50 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 21 A) Gate voltage rating: ±30 V Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SK4092-A Note LEAD PLATING Sn-Ag-Cu PACKING 100 p/package PACKAGE TO-3P (MP-88) typ. 5.0 g Note Pb-free (This product does not contain Pb in the external electrode and other parts.) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 (TO-3P) 600 ±30 ±21 ±60 200 3 150 −55 to +150 21 29.4 V V A A W W °C °C A mJ VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or typ...