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2SK4035

NEC

SWITCHING N-CHANNEL POWER MOSFET

DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK4035 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION 2SK4...


NEC

2SK4035

File Download Download 2SK4035 Datasheet


Description
DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK4035 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION 2SK4035 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance and because it is the small size surface mounting externals, is the best for the high-speed switching usage of the equipment that promotes the automation of space-saving and mounting. PACKAGE DRAWING (Unit: mm) 0.4 +0.1 –0.05 0.16 +0.1 –0.06 0.65 –0.15 +0.1 2.8 ±0.2 3 0 to 0.1 1.5 1 2 FEATURES Low input capacitance Ciss = 74 pF TYP. Low on-state resistance RDS(on) = 4.5 Ω MAX. (VGS = 10 V, ID = 0.25 A) Small and surface mount package (SC-96) 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2 ORDERING INFORMATION PART NUMBER 2SK4035 2SK4035-A Note 1. Gate 2. Source 3. Drain PACKAGE SC-96 (Mini Mold Thin Type) SC-96 (Mini Mold Thin Type) Note Pb-free (This product does not contain Pb in external electrode and other parts.) Marking: XP EQUIVALENT CIRCUIT Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Note1 Drain Current (pulse) Total Power Dissipation (TA = 25°C) Note2 Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 250 ±30 ±0.5 ±2.0 0.2 1.25 150 −55 to +150 V V A A W W °C °C Gate Body Diode Gate Pr...




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