2SK3659

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3659 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3659 PACKAGE Isolated TO-220 FEATURES 4.5V drive available. Low on-state resistance, RDS(on)1 = 5.7 mΩ MAX. (VGS = 10 V, ID = 40 A) Low gate charge, QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 65 A) Built-in gate protection diode. Avalanche capability ratings. Isolated TO-220 package. ABSOLUTE MAXIMUM RATING (TA = 25°C) Drain to source voltage (VGS = 0 V) Gate to source voltage (VDS = 0 V) Drain current (DC) (TC = 25°C) Drain current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 20 ±20 ±65 ±260 2.0 25 150 −55 to +150 35 122 V V A A W W °C °C A mJ Total power dissipation (TA = 25°C) Total power dissipation (TC = 25°C) Channel temperature Storage temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Note 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 10 V, RG = 25 Ω, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and a...