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DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK3653C
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
The 2SK3653C contains a diode and high resistivity between its gates and sources, for achieving short stability package and low noise, the 2SK3653C is especially suitable
1. 2 ±0. 1 0. 2
PACKAGE DRAWING (Unit: mm)
0. 3 ±0. 05 0. 13 +0. 1 –0. 05
time during power-on. In addition, because of its compact for compact ECMs for audio or mobile devices such as cellphones.
0. 8 ±0. 1
3
0 to 0. 05
FEATURES
• Low noise: −108. 5 dB TYP. (VDD = 2. 0 V, C = 5 pF, RL = 2. 2 kΩ) • Containing a diode and high resistivity, short stability time is ...