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2SC5023

Hitachi Semiconductor

Silicon NPN Epitaxial Type Transistor

www.DataSheet4U.com 2SC5023 Silicon NPN Epitaxial Application High frequency amplifier TO–126FM Features • Excellent...


Hitachi Semiconductor

2SC5023

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www.DataSheet4U.com 2SC5023 Silicon NPN Epitaxial Application High frequency amplifier TO–126FM Features Excellent high frequency characteristics fT = 1000 MHz typ High breakdown voltage and low output capacitance VCEO = 100 V, Cob = 4.5 pF typ Suitable for wide band video amplifier 1 2 3 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC ic(peak) PC PC*1 Tj Tstg Rating 100 100 5 0.2 0.5 1.25 8 150 –55 to +150 Unit V V V A A W W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— www.DataSheet4U.com 2SC5023 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO ICBO IEBO hFE hFE VBE VCE(sat) fT Cob Min 100 Typ — Max — Unit V Test Conditions IC = 10 µA, IE = 0 IC = 1 mA, R...




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