NPN EPITAXIAL PLANAR TRANSISTOR
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ISSUED DATE :2005/05/12 REVISED DATE :
GJ965
Description
NP N EP ITAX I AL PL ANAR T RANSI STOR
T...
Description
www.DataSheet4U.com
ISSUED DATE :2005/05/12 REVISED DATE :
GJ965
Description
NP N EP ITAX I AL PL ANAR T RANSI STOR
The GJ965 is designed for use as AF output amplifier and flash unit.
Package Dimensions TO-252
REF. A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20
Absolute Maximum Ratings (Ta = 25
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (Continuous) Collector Current (Peak PT=10mS) Junction Temperature Storage Temperature Total Power Dissipation
, unless otherwise specified) Symbol Ratings VCBO 40 VCEO 20 VEBO 7 IC 5 ICP 8 Tj +150 TsTG -55 ~ +150 PD 2
) Unit Test Conditions
Unit V V V A A W
Electrical Characteristics (Rating at Ta=25
Symbol Min. Typ. Max.
BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE1 *hFE2 fT Cob
40 20 7 230 150 -
350 150 -
100 100 1000 800 50
V V V nA nA mV MHz pF
IC=100uA IC=1mA IE=10uA VCB=60V VEB=7V lC=3A, IB=100mA VCE=2V, IC=500mA VCE=2V, IC=2A VCE=6V, IE=50mA VCB=20V, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Classification Of hFE1
Rank Range
Q 230 ~ 380
R 340 ~ 600
S 560 ~ 800
GJ965
Page: 1/2
ISSUED DATE :2005/05/12 REVISED DATE :
Characteristics Curve
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