NPN EPITAXIAL PLANAR TRANSISTOR
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ISSUED DATE :2005/05/12 REVISED DATE :
GJ31C
Description Features
NP N EP ITAXI AL PL ANAR T RANSI...
Description
www.DataSheet4U.com
ISSUED DATE :2005/05/12 REVISED DATE :
GJ31C
Description Features
NP N EP ITAXI AL PL ANAR T RANSI STOR
The GJ31C is designed for use in general purpose amplifier and switching applications. *Complementary to GJ32C
Package Dimensions TO-252
REF. A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20
Absolute Maximum Ratings (Ta = 25
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Junction Temperature Storage Temperature Total Power Dissipation
, unless otherwise specified) Symbol Ratings VCBO 100 VCEO 100 VEBO 5 IC 3 IC 5 Tj +150 TsTG -55 ~ +150 PD 2 15 PD(TC=25 )
) Unit Test Conditions
Unit V V V A A W W
Electrical Characteristics (Rating at Ta=25
Symbol Min. Typ. Max.
BVCBO BVCEO BVEBO ICES ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT
100 100 5 25 10 3
-
20 50 1 1.2 1.8 50 -
V V V uA uA mA V V MHz
IC=1mA, IE=0 IC=30mA, IB=0 IE=100uA, IC=0 VCE=100V, VEB=0V VCE=60V, IB=0 VEB=5V, IC=0 IC =3A, IB=375mA VCE=4V, IC=3A VCE=4V, IC=1A VCE=4V, IC=3A VCE=10V, IC=500mA, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
GJ31C
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ISSUED DATE :2005/05/12 REVISED DATE :
Characteristics Curve
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