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GJ31C

GTM

NPN EPITAXIAL PLANAR TRANSISTOR

www.DataSheet4U.com ISSUED DATE :2005/05/12 REVISED DATE : GJ31C Description Features NP N EP ITAXI AL PL ANAR T RANSI...


GTM

GJ31C

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Description
www.DataSheet4U.com ISSUED DATE :2005/05/12 REVISED DATE : GJ31C Description Features NP N EP ITAXI AL PL ANAR T RANSI STOR The GJ31C is designed for use in general purpose amplifier and switching applications. *Complementary to GJ32C Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings (Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Junction Temperature Storage Temperature Total Power Dissipation , unless otherwise specified) Symbol Ratings VCBO 100 VCEO 100 VEBO 5 IC 3 IC 5 Tj +150 TsTG -55 ~ +150 PD 2 15 PD(TC=25 ) ) Unit Test Conditions Unit V V V A A W W Electrical Characteristics (Rating at Ta=25 Symbol Min. Typ. Max. BVCBO BVCEO BVEBO ICES ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT 100 100 5 25 10 3 - 20 50 1 1.2 1.8 50 - V V V uA uA mA V V MHz IC=1mA, IE=0 IC=30mA, IB=0 IE=100uA, IC=0 VCE=100V, VEB=0V VCE=60V, IB=0 VEB=5V, IC=0 IC =3A, IB=375mA VCE=4V, IC=3A VCE=4V, IC=1A VCE=4V, IC=3A VCE=10V, IC=500mA, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% GJ31C Page: 1/2 ISSUED DATE :2005/05/12 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the pri...




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