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GJ1386

Part Number	GJ1386
Manufacturer	GTM
Description	PNP EPITAXIAL SILICON TRANSISTOR
Published	Sep 4, 2007
Detailed Description	com ISSUED DATE :2005/07/25 REVISED DATE : GJ1386 Description Features P NP EP ITAX I AL S ILI CO N T ...
Datasheet	GJ1386 PDF File

Overview

com ISSUED DATE :2005/07/25 REVISED DATE : GJ1386 Description Features P NP EP ITAX I AL S ILI CO N T RANSI STOR The GJ1386 is designed for low frequency applications.
Low VCE(sat) =-0.
55V(Typ.
) (IC/IB=-4A/-0.
1A) Excellent DC current gain characteristics Package Dimensions TO-252 REF.
A B C D E F S Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 2.
40 3.
00 2.
30 REF.
0.
70 0.
90 0.
60 0.
90 REF.
G H J K L M R Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0 0.
15 0.
90 1.
50 5.
40 5.
80 0.
80 1.
20 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector ...

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GJ1386 PNP EPITAXIAL SILICON TRANSISTOR - GTM

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