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GI1182

GTM

PNP SILICON EPITAXIAL PLANAR TRANSISTOR

www.DataSheet4U.com CORPORATION G I 11 8 2 Description Features The GI1182 is designed for medium power amplifier appli...



GI1182

GTM


Octopart Stock #: O-599664

Findchips Stock #: 599664-F

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Description
www.DataSheet4U.com CORPORATION G I 11 8 2 Description Features The GI1182 is designed for medium power amplifier applications. Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) ISSUED DATE :2005/10/06 REVISED DATE : P NP S ILI CO N EP ITAX I AL PL ANAR T RANSI STOR Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse, Pw=100ms) Total Power Dissipation(TC=25 ) Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 -40 -32 -5 -2 -3 10 Unit V V V A A W Electrical Characteristics (Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -40 -32 -5 82 Typ. -500 100 50 , unless otherwise noted) Max. Unit Test Conditions V IC=-50uA , IE=0 V IC=-1mA, IB=0 V IE=-50uA ,IC=0 -1 uA VCB=-20V, IE=0 -1 uA VEB=-4V, IC=0 -800 mV IC=-2A, IB=-200mA 390 VCE=-3V, IC=-500mA MHz VCE=-5V, IC=-500mA, f=100MHz pF VCB=-10V, IE=0, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Classification Of hFE Rank Range P 82 ~ 180 Q 120 ~ 270 R 180 ~ 390 GI1182 Page: 1/2 CORPORATION Characteristics Curve ISSUED DATE :2005/10/06 REVISED DATE : Important Notice: All rights are reserved. Reproduc...




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