www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/04/06 REVISED DATE :
GI9T 18
Description
N-CHANNEL ENHA...
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/04/06 REVISED DATE :
GI9T 18
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 14m 38A
The GI9T18 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. *Capable of 2.5V gate drive *Low Gate Charge
Features
Package Dimensions TO-251
REF. A B C D E F
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90
REF. G H J K L M
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,
[email protected] Continuous Drain Current,
[email protected] Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg
Ratings 20 ±12 38 24 140 31.3 0.25 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 4 110 Unit /W /W
GI9T18
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ISSUED DATE :2005/04/06 REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
unless otherwise specified)
Min. 20 0.5 Typ. 0.1 33 16 3 9 12 80 22 12 1115 280 220 1.54 Max. 1.5 ±100 1 25 14 28 25 1790 pF ns nC Unit V V/ V S nA uA uA m Test Conditions V...