GI9T18

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/04/06 REVISED DATE : GI9T 18 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 14m 38A The GI9T18 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. *Capable of 2.5V gate drive *Low Gate Charge Features Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, [email protected] Continuous Drain Current, [email protected] Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 20 ±12 38 24 140 31.3 0.25 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 4 110 Unit /W /W GI9T18 Page: 1/4 ISSUED DATE :2005/04/06 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 20 0.5 Typ. 0.1 33 16 3 9 12 80 22 12 1115 280 220 1.54 Max. 1.5 ±100 1 25 14 28 25 1790 pF ns nC Unit V V/ V S nA uA uA m Test Conditions V...