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GI6679

Part Number	GI6679
Manufacturer	GTM
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 4, 2007
Detailed Description	com Pb Free Plating Product ISSUED DATE :2005/08/04 REVISED DATE : GI6679 Description P-CHANNEL ENHAN...
Datasheet	GI6679 PDF File

Overview

com Pb Free Plating Product ISSUED DATE :2005/08/04 REVISED DATE : GI6679 Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 9m -75A The GI6679 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-251 package is available for low-profile applications and suited for low voltage applications such as DC/DC converters.
*Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Features Package Dimensions TO-251 REF.
A B C D E F Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 7.
20 7.
80 2.
30 REF.
0.
60 0.
90 REF.
G H J K L M Millimeter Min.
...

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GI6679 P-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM

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