www.DataSheet4U.com
ISSUED DATE :2005/07/15 REVISED DATE :
GI4672
Description Features
NPN EPITAXIAL SILICON TRANSISTO...
www.DataSheet4U.com
ISSUED DATE :2005/07/15 REVISED DATE :
GI4672
Description Features
NPN EPITAXIAL SILICON
TRANSISTOR
The GI4672 is designed for low frequency amplifier applications. Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA Excellent DC current gain characteristics
Package Dimensions
TO-251
REF. A B C D E F
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90
REF. G H J K L M
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80
Absolute Maximum Ratings (TA=25 )
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse PW=10ms) Total Device Dissipation (TA=25 ) Total Device Dissipation (TC=25 ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC PD PD TJ Tstg Ratings 60 50 6 2 5 1.5 10 150 -55 ~ +150 Unit V V V A A W W
Electrical Characteristics (TA = 25
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 60 50 6 120 Typ. 0.1 210 25
unless otherwise noted)
Max. 100 100 0.35 400 MHz pF Unit V V V nA nA V IC=50uA, IE=0 IC=1mA, IB=0 IE=50uA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 IC=1A, IB=50mA VCE=2V, IC=500mA VCE=2V, IE=500mA, f=100MHz VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Test Conditions
Classification Of hFE
Rank Range A 120 ~ 240 B 200 ~ 400
GI4672
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ISSUED DATE :2005/07/15 REVISED DATE :
Characteristics Curve
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