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GI3310

Part Number	GI3310
Manufacturer	GTM
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 4, 2007
Detailed Description	com Pb Free Plating Product ISSUED DATE :2005/12/05 REVISED DATE : GI3310 Description P-CHANNEL ENHAN...
Datasheet	GI3310 PDF File

Overview

com Pb Free Plating Product ISSUED DATE :2005/12/05 REVISED DATE : GI3310 Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 150m -10A The GI3310 provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The through-hole version (TO-251) is available for low-profile applications and suited for low voltage and battery power applications.
*Simple Drive Requirement *2.
5V Gate Drive Capability Features Package Dimensions TO-251 REF.
A B C D E F Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 7.
20 7.
80 2.
30 REF.
0.
60 0.
90 REF.
G H J K L M Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0.
45 ...

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