DatasheetsPDF.com

RF5184 Dataheets PDF



Part Number RF5184
Manufacturers RF Micro Devices
Logo RF Micro Devices
Description W-CDMA POWER AMPLIFIER MODULE
Datasheet RF5184 DatasheetRF5184 Datasheet (PDF)

www.DataSheet4U.com RF5184 0 Typical Applications • 3V W-CDMA Cellular Handset (Band 5) • 3V W-CDMA US-PCS Handset (Band 2) DUAL-BAND 800MHz/1900MHz W-CDMA POWER AMPLIFIER MODULE Product Description 4.0 -A-B- The RF5184 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in W-CDMA handheld digital cellular equipmen.

  RF5184   RF5184


Document
www.DataSheet4U.com RF5184 0 Typical Applications • 3V W-CDMA Cellular Handset (Band 5) • 3V W-CDMA US-PCS Handset (Band 2) DUAL-BAND 800MHz/1900MHz W-CDMA POWER AMPLIFIER MODULE Product Description 4.0 -A-B- The RF5184 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in W-CDMA handheld digital cellular equipment, spread-spectrum systems, and other applications in the 824MHz to 849MHz band (Band 5) and 1850MHz to 1910MHz band (Band 2). The RF5184 has a digital control line for low power applications to lower quiescent current. The RF5184 is assembled in a 24-pin, 4mmx4mm, QFN package. 1.00 0.80 0.10 C 4.0 0.10 C B 2 PL 0.10 C A 2 PL 0.2 C Shaded area indicates pin 1. Dimensions in mm. -C- 0.50 TYP 0.10 C A B 0.55 TYP 0.35 SEATING PLANE Scale: None 0.10 C 2.60 2 PL 2.40 0.05 TYP 0.00 0.203 TYP 0.08 C 0.30 TYP 0.18 0.10 M C A B TYP 0.08 0.03 0.50 TYP 0.30 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT VMODE PCS 9 Package Style: QFN, 24-Pin, 4x4 GaAs HBT SiGe HBT GaN HEMT VCC1 PCS VCC2 PCS VCC2 PCS GaAs MESFET Si CMOS SiGe Bi-CMOS VCC2 PCS Features • Input/Output Internally Matched@50 Ω • 43% Peak Linear Efficiency for Cell Band • -41dBc ACLR @ 5MHz for Cell Band 24 VREG - PCS 1 RF IN - PCS 2 VREG - CELL 3 VMODE - CELL 4 RF IN - CELL 5 VCC1 - CELL 6 7 NC VCC BIAS 23 22 21 20 19 18 NC 17 NC 16 RF OUT - PCS • -40dBc ACLR@5MHz for PCS Band • 44% Peak Linear Efficiency for PCS Band • HSDPA Capable Bias PCS Bias Cell 15 NC 14 RF OUT - CELL 13 NC Ordering Information RF5184 Dual-Band 800MHz/1900MHz W-CDMA Power Amplifier Module RF5184PCBA-410 Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 8 NC 9 VCC2 CELL 10 VCC2 CELL 11 VCC2 CELL 12 NC Functional Block Diagram Rev A0 060323 2-689 RF5184 Absolute Maximum Ratings Parameter Supply Voltage (RF off) Supply Voltage (POUT ≤ 31dBm) Control Voltage (VREG) Input RF Power Mode Voltage (VMODE) Operating Temperature Storage Temperature Rating +8.0 +5.2 +3.9 +10 +3.9 -30 to +110 -40 to +150 Unit V V V dBm V °C °C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter High Power Mode W-CDMA Cell Band (VMODE Low) Operating Frequency Range Linear Gain Maximum Linear Output Linear Efficiency Maximum ICC ACLR @ 5MHz ACLR @ 10MHz Input VSWR Stability In-Band Stability Out-of-Band Noise Power Specification Min. Typ. Max. Unit Condition T=25oC Ambient, VCC =3.4V, VREG =2.8V, VMODE =0V, and POUT =28dBm for all parameters (unless otherwise specified). 824 26.0 28 39 -37 -48 28.5 43 432 -41 -54 2:1 849 31.0 476 MHz dB dBm % mA dBc dBc No oscillation>-70dBc No damage At 45MHz offset. T=25oC Ambient, VCC =3.4V, VREG =2.8V, VMODE =2.8V, and POUT =16dBm for all parameters (unless otherwise specified). 6:1 10:1 -133 dBm/Hz Mid Power Mode W-CDMA Cell Band (VMODE High) Operating Frequency Range Linear Gain Maximum Linear Output Maximum ICC ACLR @5MHz ACLR @10MHz Input VSWR Output VSWR Stability 824 25 16 -37 -48 27 125 -41 -59 2:1 849 30 150 MHz dB dBm mA dBc dBc 6:1 10:1 No oscillation>-70dBc No damage T=25oC Ambient, VCC =0.75V, VREG =2.8V, VMODE =2.8V, and POUT =8dBm for all parameters (unless otherwise specified). Low Power Mode W-CDMA Cell Band (VMODE High) Operating Frequency Range Linear Gain Efficiency ACLR @ 5MHz ACLR @ 10MHz 824 22 11.5 -42 -55 849 MHz dB % dBc dBc 2-690 Rev A0 060323 RF5184 Parameter High Power Mode W-CDMA PCS Band (VMODE Low) Operating Frequency Range Linear Gain Maximum Linear Output Linear Efficiency Maximum ICC ACLR @ 5MHz ACLR @ 10MHz Input VSWR Output VSWR Stability Noise Power 1850 26.5 28 39 -36 -47 29.0 44 422 -40 -51 2:1 1910 31.5 MHz dB dBm % mA dBc dBc No oscillation>-70dBc No damage At 80MHz offset. T=25oC Ambient, VCC =3.4V, VREG =2.8V, VMODE =2.8V, and POUT =16dBm for all parameters (unless otherwise specified). 1850 25.5 16 -36 -47 28.0 -42 -58 125 2:1 1910 30.5 MHz dB dBm dBc dBc mA No oscillation>-70dBc No damage T=25oC Ambient, VCC =0.75V, VREG =2.8V, VMODE =2.8V, and POUT =8dBm for all parameters (unless otherwise specified). 1850 22 -43 -58 11.5 1910 MHz dB dBc dBc % Specification Min. Typ. Max. Unit Condition T=25oC Ambient, VCC =3.4V, VREG =2.8V, VMODE =0V, and POUT =28dBm for all parameters (unless otherwise specified). 476 6:1 10:1 -137 dBm/Hz Mid Power Mode W-CDMA PCS Band (VMODE High) Operating Frequency Range Linear Gain Maximum Linear Output ACLR @ 5MHz ACLR @ 10MHz Maximum ICC Input VSWR Output .


RF5163 RF5184 RF5188


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)