RF5110

www.DataSheet4U.com RF5110 0 Typical Applications 3V GSM Cellular Handsets 3V Dual-Band/Triple-Band Handsets GPRS Compatible Product Description -A3.00 SQ. 3V GSM POWER AMPLIFIER Commercial and Consumer Systems Portable Battery-Powered Equipment 0.15 C A 2 PLCS The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS applications. The device is manufactured on an advanced GaAs HBT process, and has been designed for use as the final RF amplifier in GSM hand-held digital cellular equipment and other applications in the 800MHz to 950MHz band. On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic “low” for standby operation. The device is self-contained with 50 Ω input and the output can be easily matched to obtain optimum power and efficiency characteristics. The RF5110 can be used together with the RF5111 for dual-band operation. The device is packaged in an ultra-small 3mmx3mmx1mm plastic package, minimizing the required board space. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT 1.00 0.85 0.80 0.65 0.05 C 1.50 TYP 2 PLCS 0.15 C B 0.05 0.01 12° MAX 2 PLCS 0.15 C B -B1.37 TYP 2 PLCS 0.15 C A -CDimensions in mm. 0.10 M C A B SEATING PLANE 2.75 SQ. 0.60 0.24 TYP 0.45 0.00 4 PLCS Shaded lead is pin 1. 0.30 0.18 1.65 SQ. 1.35 0.23 0.13 4 PLCS 0.50 0.55 0.30 9 Package Style: QFN, 16-Pin, 3x3 GaAs HBT SiGe HBT GaN...