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RF3398 Dataheets PDF



Part Number RF3398
Manufacturers RF Micro Devices
Logo RF Micro Devices
Description GENERAL PURPOSE AMPLIFIER
Datasheet RF3398 DatasheetRF3398 Datasheet (PDF)

www.DataSheet4U.com RF3398 0 RoHS Compliant & Pb-Free Product Typical Applications • Basestation Applications • Broadband, Low-Noise Gain Blocks • IF or RF Buffer Amplifiers Product Description The RF3398 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 Ω gain block. Applications include IF and RF amplification in wireless voice and .

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www.DataSheet4U.com RF3398 0 RoHS Compliant & Pb-Free Product Typical Applications • Basestation Applications • Broadband, Low-Noise Gain Blocks • IF or RF Buffer Amplifiers Product Description The RF3398 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 Ω input and output impedances and requires only two external DC-biasing elements to operate as specified. The device is designed for cost effective high reliability in a plastic package. The 3mmx3mm footprint is compatible with standard ceramic and plastic Micro-X packages. 2 PLCS 0.10 C A GENERAL PURPOSE AMPLIFIER • Driver Stage for Power Amplifiers • Final PA for Low-Power Applications • High Reliability Applications 0.05 C -A3 1 3.00 2 PLCS 0.10 C B 0.20 REF. 0.90 0.85 0.05 0.00 3.00 0.10 C B 2 PLCS 12° MAX SEATING PLANE 0.10 C A 2 PLCS 2.75 SQ -B- Dimensions in mm. -C- Shaded lead is pin 1. 0.10 M C A B 0.60 0.24 TYP 0.35 0.30 PIN 1 ID R0.20 1.90 1.60 0.45 0.35 0.375 0.275 1.15 0.85 0.65 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT 9 Package Style: QFN, 12-Pin, 3x3 GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Features • DC to >6000MHz Operation • Internally Matched Input and Output • 12.3dB Small Signal Gain GND GND GND • +25.4dBm Output IP3 • +13.6dBm Output P1dB 9 NC 8 RF OUT 7 NC 12 NC 1 RF IN 2 NC 3 4 GND 11 10 • Footprint Compatible with Micro-X 5 GND 6 GND Ordering Information RF3398 RF3398 PCBA General Purpose Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A8 051025 4-615 RF3398 Absolute Maximum Ratings Parameter Input RF Power Operating Ambient Temperature Storage Temperature ICC Rating +13 -40 to +85 -60 to +150 60 Unit dBm °C °C mA Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Parameter Overall Frequency Range 3dB Bandwidth Gain Specification Min. Typ. Max. DC to >6000 4.5 12.3 12.2 12.0 11.5 11.4 11.0 3.7 <1.75:1 <1.77:1 +25.4 +24.0 +13.6 +13.5 16.5 207 115 Unit MHz GHz dB dB dB dB dB dB dB Condition T=25 °C, ICC =40mA (See Note 1.) 11.3 11.2 10.0 13.5 Noise Figure Input VSWR Output VSWR Output IP3 Output P1dB Reverse Isolation +24.0 +23.0 +12.6 +11.9 dBm dBm dBm dBm dB °C/W °C Thermal ThetaJC Maximum Measured Junction Temperature at DC Bias Conditions Mean Time To Failures Freq=500MHz Freq=850MHz Freq=2000MHz Freq=3000MHz (See Note) Freq=4000MHz (See Note) Freq=6000MHz (See Note) Freq=2000MHz In a 50 Ω system, DC to 6000MHz In a 50 Ω system, DC to 6000MHz Freq=850MHz Freq=2000MHz Freq=850MHz Freq=2000MHz Freq=2000MHz ICC =40mA, PDISS =147mW. (See Note 3.) TAMB =+85°C TAMB =+85°C With 22 Ω bias resistor Device Operating Voltage 3.8 3.9 4.0 V At pin 8 with ICC =40mA 4.5 4.8 5.1 V At evaluation board connector, ICC =40mA Operating Current 40 60 mA See Note 2. Note 1: All specification and characterization data has been gathered on standard FR-4 evaluation boards. These evaluation boards are not optimized for frequencies above 2.5GHz. Performance above 2.5GHz may improve if a high performance PCB is used. Note 2: The RF3398 must be operated at or below 60mA in order to achieve the thermal performance listed above. While the RF3398 may be operated at higher bias currents, 40mA is the recommended bias to ensure the highest possible reliability and electrical performance. Note 3: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution should be used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 60mA over all intended operating conditions. 44,137 years Power Supply 4-616 Rev A8 051025 RF3398 Pin 1 2 Function NC RF IN Description No internal connections. It is not necessary to ground this pin. RF input pin. This pin is NOT internally DC-blocked. A DC-blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC-coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. No internal connections. It is not necessary to ground this pin. Ground connection. Ground connection. Ground connection. No i.


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