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RF3395
0
RoHS Compliant & Pb-Free Product Typical Applications • Basestation Applications • Broadband, Low-Noise Gain Blocks • IF or RF Buffer Amplifiers Product Description
The RF3395 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 Ω input and output impedances and requires only two external DC-biasing elements to operate as specified. The device is designed for cost effective high reliability in a plastic package. The 3mmx3mm footprint is compatible with standard ceramic and plastic Micro-X packages.
2 PLCS 0.10 C A
GENERAL PURPOSE AMPLIFIER
• Driver Stage for Power Amplifiers • Final PA for Low-Power Applications • High Reliability Applications
0.05 C
-A3
1
3.00
2 PLCS 0.10 C B
0.20 REF.
0.90 0.85 0.05 0.00
3.00
0.10 C B 2 PLCS
12° MAX SEATING PLANE
0.10 C A 2 PLCS
2.75 SQ
-B-
Dimensions in mm.
-C-
Shaded lead is pin 1.
0.10 M C A B
0.60 0.24 TYP
0.35 0.30 PIN 1 ID R0.20 1.90 1.60
0.45 0.35 0.375 0.275
1.15 0.85 0.65
Optimum Technology Matching® Applied
Si BJT Si Bi-CMOS InGaP/HBT
9
Package Style: QFN, 12-Pin, 3x3
GaAs HBT SiGe HBT GaN HEMT
GaAs MESFET Si CMOS SiGe Bi-CMOS
Features • DC to >6000MHz Operation • Internally Matched Input and Output • 13.2dB Small Signal Gain
GND
GND
GND
• +28.7dBm Output IP3 • +16.0dBm Output P1dB
9 NC 8 RF OUT 7 NC
12 NC 1 RF IN 2 NC 3 4 GND
11
10
• Footprint Compatible with Micro-X
5 GND
6 GND
Ordering Information
RF3395 RF3395PCBA-41X General Purpose Amplifier Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A5 060908
4-591
RF3395
Absolute Maximum Ratings Parameter
Input RF Power Operating Ambient Temperature Storage Temperature ICC
Rating
+13 -40 to +85 -60 to +150 80
Unit
dBm °C °C mA
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. RoHS marking based on EUDirective2002/95/EC (at time of this printing). However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Overall
Frequency Range 3dB Bandwidth Gain
Specification Min. Typ. Max.
DC to >6000 6 13.5 13.5 13.2 12.7 12.4 11.0 4.5 1.9:1 2.0:1 1.7:1 +34.5 +28.7 +18.6 +16.0 -18.0 221 154
Unit
MHz GHz dB dB dB dB
Condition
T=25 °C, ICC =65mA (See Note 1.)
12.5 12.5 12.2 11.7 11.4 10.0
Noise Figure Input VSWR Output VSWR Output IP3 Output P1dB Reverse Isolation +30.0 +25.7 +17.0 +14.5
dB
.