2SC6116LS

www.DataSheet4U.com Ordering number : ENA0579 2SC6116LS SANYO Semiconductors DATA SHEET 2SC6116LS Features NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings 1500 800 6 6 15 2.0 30 150 --55 to +150 Unit V V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Diode Forward Voltage Fall Time Symbol ICBO ICES VCEO(sus) IEBO VCE(sat) VBE(sat) hFE1 hFE2 VF tf Conditions VCB=800V, IE=0A VCE=1500V, RBE=0Ω IC=100mA, IB=0A VEB=4V, IC=0A IC=3.15A, IB=0.63A IC=3.15A, IB=0.63A VCE=5V, IC=0.5A VCE=5V, IC=3.5A IEC=6A IC=2A, IB1=0.4A, IB2=-0.8A 10 5.3 7.5 2 0.2 V µs 800 40 130 2 1.5 Ratings min typ max 10 1.0 Unit µA mA V mA V V Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high...