BULD1101E

www.DataSheet4U.com BULD1101E High voltage fast-switching NPN Power Transistor General features ■ ■ ■ ■ ■ High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed In compliance with the 2002/93/EC European Directive 3 1 DPAK TO-252 IPAK TO-251 1 2 3 Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast. Internal schematic diagram Applications ■ Electronic ballast for fluorescent lighting Order codes Part number BULD1101ET4 BULD1101E-1 Marking BULD1101E BULD1101E Package DPAK IPAK Packaging Tape & reel Tube May 2007 Rev 2 1/11 www.st.com 11 Electrical ratings BULD1101E 1 Electrical ratings Table 1. Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Absolute maximum rating Parameter Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at T c = 25°C Storage temperature Max. operating junction temperature Value 1100 450 12 3 6 1.5 3 35 -65 to 150 150 Unit V V V A A A A W °C °...