2SK3556-01L

www.DataSheet4U.com 2SK3556-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 250 220 ±25 ±100 ±30 25 372 20 5 2.02 135 +150 -55 to +150 Unit V V A A V A mJ kV/µs kV/µs W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) < < DSS, Tch=150°C < *1 L=0.67mH, Vcc=48V *2 Tch=150°C *3 IF< =-ID, -di/dt=50A/µs, Vcc=BV *4 VDS< 250V *5 V GS =-30V *6 t=60sec f=60Hz = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability ...