IRLL024NQ

www.DataSheet4U.com PD-94152 AUTOMOTIVE MOSFET Typical Applications q q q q q IRLL024NQ HEXFET® Power MOSFET D Electronic Fuel Injection Active Suspension Power Doors, Windows & Seats Cruise Control Air Bags Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Dynamic dv/dt Rating Automotive [Q101] Qualified G VDSS = 55V RDS(on) = 0.065Ω Benefits q q q q q q S ID = 3.1A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET in a SOT-223 package utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this Automotive qualified HEXFET Power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SOT-223 package is designed for surface mount and the enlarged tab provides improved thermal characteristics making it ideal in a variety of power applications. Power dissipation of 1.0W is possible in a typical surface mount application. Available in Tape & Reel. SOT-223 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Pulsed Drain Current Q...