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IRHLUB7930Z4

International Rectifier

POWER MOSFET

PD-94764O IRHLUB7970Z4 JANSR2N7626UB RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) Product Summary Pa...


International Rectifier

IRHLUB7930Z4

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Description
PD-94764O IRHLUB7970Z4 JANSR2N7626UB RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB) Product Summary Part Number Radiation Level IRHLUB7970Z4 100 kRads(Si) IRHLUB7930Z4 300 kRads(Si) RDS(on) 1.4 1.4 ID -0.53A -0.53A QPL Part Number JANSR2N7626UB JANSF2N7626UB Refer to Page 10 for 3 Additional Part Numbers IRHLUBN7970Z4, IRHLUBC7970Z4, IRHLUBCN7970Z4 60V, P-CHANNEL REF: MIL-PRF-19500/745 R7 TECHNOLOGY UB (SHIELDED METAL LID) Description IR HiRel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers. Features  5V CMOS and TTL Compatible  Fast Switching  Single Event Effect (SEE) Hardened  Low Total Gate Charge  Simple Drive Requirements  Hermetically Sealed  Surface Mount  Light Weight  Complementary N-Channel Available- IRHLUB770Z4, IRHLUBN770Z4 IRHLUBC770Z4, IRHLUBCN770Z4 Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = -4.5V, TC = 25°C Continuous Drain Current ID2 @ VGS = -4.5V, TC = 100°C IDM @TC = 25°C Continuous Drain Current Pulsed Drain Current  PD @TC = 25°C Maximum Power Di...




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