POWER MOSFET
PD-94764O
IRHLUB7970Z4 JANSR2N7626UB
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)
Product Summary Pa...
Description
PD-94764O
IRHLUB7970Z4 JANSR2N7626UB
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)
Product Summary Part Number Radiation Level
IRHLUB7970Z4 100 kRads(Si)
IRHLUB7930Z4 300 kRads(Si)
RDS(on)
1.4 1.4
ID
-0.53A -0.53A
QPL Part Number
JANSR2N7626UB JANSF2N7626UB
Refer to Page 10 for 3 Additional Part Numbers IRHLUBN7970Z4, IRHLUBC7970Z4, IRHLUBCN7970Z4
60V, P-CHANNEL
REF: MIL-PRF-19500/745
R7 TECHNOLOGY
UB (SHIELDED METAL LID)
Description
IR HiRel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.
These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.
Features
5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Hermetically Sealed Surface Mount Light Weight Complementary N-Channel Available-
IRHLUB770Z4, IRHLUBN770Z4 IRHLUBC770Z4, IRHLUBCN770Z4
Absolute Maximum Ratings
Symbol
Parameter
ID1 @ VGS = -4.5V, TC = 25°C
Continuous Drain Current
ID2 @ VGS = -4.5V, TC = 100°C IDM @TC = 25°C
Continuous Drain Current Pulsed Drain Current
PD @TC = 25°C
Maximum Power Di...
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