DatasheetsPDF.com

IRF7207PBF Dataheets PDF



Part Number IRF7207PBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF7207PBF DatasheetIRF7207PBF Datasheet (PDF)

www.DataSheet4U.com PD - 95166 IRF7207PbF HEXFET® Power MOSFET Generation 5 Technology P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description l l S 1 2 3 4 8 7 A D D D D S S G VDSS = -20V RDS(on) = 0.06Ω 6 5 Top View Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switc.

  IRF7207PBF   IRF7207PBF


Document
www.DataSheet4U.com PD - 95166 IRF7207PbF HEXFET® Power MOSFET Generation 5 Technology P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description l l S 1 2 3 4 8 7 A D D D D S S G VDSS = -20V RDS(on) = 0.06Ω 6 5 Top View Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings VDS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C VGS VGSM EAS dv/dt TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µs Single Pulse Avalanche Energy‚ Peak Diode Recovery dv/dt ƒ Junction and Storage Temperature Range Max. -20 -5.4 -4.3 -43 2.5 1.6 0.02 ± 12 -16 140 -5.0 -55 to + 150 Units V A W W/°C V V V/ns °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient… Typ. ––– Max. 50 Units °C/W www.irf.com 1 10/6/04 IRF7207PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -20 ––– ––– ––– -0.7 8.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– -0.011 ––– ––– ––– ––– ––– ––– ––– ––– 15 2.2 5.7 11 24 43 41 780 410 200 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 0.06 VGS = -4.5V, ID = -5.4A „ Ω 0.10 VGS = -2.7V, ID = -2.7A „ ––– V VDS = VGS, ID = -250µA ––– S VDS = -10V, ID = -5.4A -1.0 VDS = -16V, VGS = 0V µA -25 VDS = -16V, VGS = 0V, TJ = 125°C -100 VGS = 12V nA 100 VGS = -12V 22 ID = -5.4A 3.3 nC VDS = -10V 8.6 VGS = -4.5V, „ ––– VDD = -10V ––– ID = -1.0A ns ––– RG = 6.0Ω ––– RD = 10Ω, „ ––– VGS = 0V ––– pF VDS = -15V ––– ƒ = 1.0MHz, Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 42 50 -3.1 A -43 -1.0 63 75 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -3.1A, VGS = 0V ƒ TJ = 25°C, IF = -3.1A di/dt = -100A/µs ƒ D S Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ ISD ≤ -5.4A, di/dt ≤ -79A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C ‚ Starting TJ = 25°C, L = 9.6mH RG = 25Ω, IAS = -5.4A. „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … When mounted on 1 inch square copper board, t<10 sec 2 www.irf.com IRF7207PbF 100 VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP 10 10 -2.25V -2.25V 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 1 0.1 20µs PULSE WIDTH TJ = 150 ° C 1 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 TJ = 25 ° C TJ = 150 ° C 10 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = -5.4A -I D , Drain-to-Source Current (A) 1.5 1.0 0.5 1 2.0 V DS = -10V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 0.0 -60 -40 -20 VGS = -4.5V -10V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7207PbF 1600 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = -5.4A VDS =-.


IRF7207 IRF7207PBF IRF7319PBF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)