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PD - 95166
IRF7207PbF
HEXFET® Power MOSFET
Generation 5 Technology P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description
l l
S
1 2 3 4 8 7
A D D D D
S
S G
VDSS = -20V RDS(on) = 0.06Ω
6 5
Top View
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
SO-8
Absolute Maximum Ratings
VDS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C VGS VGSM EAS dv/dt TJ, TSTG
Parameter
Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10µs Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
-20 -5.4 -4.3 -43 2.5 1.6 0.02 ± 12 -16 140 -5.0 -55 to + 150
Units
V A W W/°C V V V/ns °C
Thermal Resistance
Parameter
RθJA Maximum Junction-to-Ambient
Typ.
–––
Max.
50
Units
°C/W
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10/6/04
IRF7207PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. -20 ––– ––– ––– -0.7 8.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
Typ. ––– -0.011 ––– ––– ––– ––– ––– ––– ––– ––– 15 2.2 5.7 11 24 43 41 780 410 200
Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 0.06 VGS = -4.5V, ID = -5.4A Ω 0.10 VGS = -2.7V, ID = -2.7A ––– V VDS = VGS, ID = -250µA ––– S VDS = -10V, ID = -5.4A -1.0 VDS = -16V, VGS = 0V µA -25 VDS = -16V, VGS = 0V, TJ = 125°C -100 VGS = 12V nA 100 VGS = -12V 22 ID = -5.4A 3.3 nC VDS = -10V 8.6 VGS = -4.5V, ––– VDD = -10V ––– ID = -1.0A ns ––– RG = 6.0Ω ––– RD = 10Ω, ––– VGS = 0V ––– pF VDS = -15V ––– ƒ = 1.0MHz,
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units ––– ––– ––– ––– 42 50 -3.1 A -43 -1.0 63 75 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -3.1A, VGS = 0V TJ = 25°C, IF = -3.1A di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
ISD ≤ -5.4A, di/dt ≤ -79A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Starting TJ = 25°C, L = 9.6mH
RG = 25Ω, IAS = -5.4A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
2
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IRF7207PbF
100
VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP
100
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V BOTTOM -2.25V TOP
10
10
-2.25V
-2.25V
1 0.1
20µs PULSE WIDTH TJ = 25 °C
1 10
1 0.1
20µs PULSE WIDTH TJ = 150 ° C
1 10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
TJ = 25 ° C TJ = 150 ° C
10
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -5.4A
-I D , Drain-to-Source Current (A)
1.5
1.0
0.5
1 2.0
V DS = -10V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0
0.0 -60 -40 -20
VGS = -4.5V -10V
0 20 40 60 80 100 120 140 160
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7207PbF
1600
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
10
ID = -5.4A VDS =-.