IRF6668PBF

www.DataSheet4U.com PD - 97232A IRF6668PbF IRF6668TRPbF DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) l l l l l l l l l l RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  VDSS Qg tot VGS Qgd 7.8nC RDS(on) Qoss 12nC 80V max ±20V max 12mΩ@ 10V Qgs2 1.6nC Qrr 40nC Vgs(th) 4.0V 22nC MZ Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MZ DirectFET™ ISOMETRIC Description The IRF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6668PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) ...