LN189S

Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm Light source for distance measuring systems 5.0±0.3 6.0±0.3 3.4±0.2 3.0±0.2 4.0± 0.15 1.0 0.6 1 0.4±0.1 Features High-power output, high-efficiency : PO = 5.5 mW (typ.) Fast response and high-speed modulation capability : tr, tf =20 ns (typ.) Infrared light emission close to monochromatic light : λP = 880 nm(typ.) Narrow direcivity using spherical lenses; works well with optical systems in auto focus systems , , , 2 3.2±0.15 0.1 max. 1.0 0.6±0.1 0.3 0.2 Spherical lens ø0.4±0.03 0.6±0.1 0.5±0.1 0.15 1.5±0.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 160 80 0.15 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C 2.0±0.2 1.5 0.75 0.35 Mini hollow mold resin package 2.2±0.15 1: Anode 2: Cathode f = 10 kHz, Duty cycle = 25 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Rise time Fall time Half-power angle Precautions for Use [Airtightness] This product is not structured to provide a complete air seal. Therefore it cannot be immersed in solutions for purposes such as boiling tests or ultrasonic cleaning. [Ability to withstand soldering heat] The package of this product contains thermoplastic res...