LN172

Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 12 mW (typ.) Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) Good optical power output linearity with respect to input current Long lifetime, high reliability 1. 0± 0. 15 2.4±0.3 12.7 min. 1.2±0.1 0.25±0.1 ø4.2 +0.2 –0.1 2-ø0.45±0.05 Wide directivity : θ = 100 deg. (typ.) 15 0. 0± 1. 45± 3˚ ø5.35 +0.2 –0.1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * 2 1 Symbol PD IF IFP * Ratings 170 100 2 3 –25 to +85 –30 to +100 Unit mW mA A V ˚C ˚C 2.54±0.25 1: Cathode 2: Anode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Response time Half-power angle Symbol PO λP ∆λ VF IR Ct tr , t f θ Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 3V VR = 0V, f = 1MHz IF = 100mA The angle in which radiant intencity is 50% min 7 typ 12 900 70 1.4 50 700 100 max Unit mW nm nm 1.7 10 V µA pF ns deg. 1 Infrared Light Emitting Diodes LN172 IF — Ta 120 10 2 IFP — Duty cycle tw = 10µs Ta = 25˚C 10 IFP — VF tw = 10µs f = 100Hz Ta = 25˚C IF (mA) IFP (A) 10 Allo...