LN162S

Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 3.5 mW (typ.) Infrared light emission close to monochromatic light : λP = 950 nm (typ.) Small ceramic package 3.75±0.3 2.0±0.2 12.5 min. ø3.0±0.15 ø0.3±0.05 ø0.45±0.05 0.9±0.15 Absolute Maximum Ratings (Ta = 25˚C) 2 1 1: Anode 2: Cathode Parameter Power dissipation Forward current (DC) Pulse forward Current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 75 50 1 3 –25 to +85 –30 to +100 Unit mW mA A V ˚C ˚C f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol PO λP ∆λ VF IR Ct θ Conditions IF = 50mA IF = 50mA IF = 50mA IF = 50mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 1.5 typ 3.5 950 50 1.2 50 80 max Unit mW nm nm 1.5 10 V µA pF deg. 1 Infrared Light Emitting Diodes LN162S IF — Ta 60 10 2 IFP — Duty cycle 80 Ta = 25˚C 70 IF — VF Ta = 25˚C IF (mA) IFP (A) 50 IF (mA) Forward current 10 –1 1 10 10 2 10 60 50 40 30 20 10 Allowable forward current 40 Pulse forward current 1 30 10 –1 20 10 10 –2 0 – 25 0 20 40 60 80 100 10 –3 10 –2 0 0 0.4 0.8 1.2 1.6 Ambient temperature Ta (˚C ) Duty cyc...