GaAs Infrared Light Emitting Diode
Infrared Light Emitting Diodes
LN162S
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Feature...
Description
Infrared Light Emitting Diodes
LN162S
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 3.5 mW (typ.) Infrared light emission close to monochromatic light : λP = 950 nm (typ.) Small ceramic package
3.75±0.3 2.0±0.2 12.5 min.
ø3.0±0.15
ø0.3±0.05 ø0.45±0.05
0.9±0.15
Absolute Maximum Ratings (Ta = 25˚C)
2
1 1: Anode 2: Cathode
Parameter Power dissipation Forward current (DC) Pulse forward Current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD IF IFP* VR Topr Tstg
Ratings 75 50 1 3 –25 to +85 –30 to +100
Unit mW mA A V ˚C ˚C
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol PO λP ∆λ VF IR Ct θ Conditions IF = 50mA IF = 50mA IF = 50mA IF = 50mA VR = 3V VR = 0V, f = 1MHz
The angle in which radiant intencity is 50%
min 1.5
typ 3.5 950 50 1.2 50 80
max
Unit mW nm nm
1.5 10
V µA pF deg.
1
Infrared Light Emitting Diodes
LN162S
IF — Ta
60 10 2
IFP — Duty cycle
80 Ta = 25˚C 70
IF — VF
Ta = 25˚C
IF (mA)
IFP (A)
50
IF (mA) Forward current
10 –1 1 10 10 2
10
60 50 40 30 20 10
Allowable forward current
40
Pulse forward current
1
30
10 –1
20
10
10 –2
0 – 25
0
20
40
60
80
100
10 –3 10 –2
0
0
0.4
0.8
1.2
1.6
Ambient temperature Ta (˚C )
Duty cyc...
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