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LN152

Panasonic Semiconductor

GaAs Infrared Light Emitting Diode


Description
Infrared Light Emitting Diodes LN152 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 10 mW (typ.) Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm (typ.) Optimum for mesuring instruments and con...



Panasonic Semiconductor

LN152

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