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MICROELECTRONICS
A
A
Power Discrete GMR30H45C
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Description
...
www.DataSheet4U.com
MICROELECTRONICS
A
A
Power Discrete GMR30H45C
HIGH VOLTAGE POWER
SCHOTTKY RECTIFIER
Description
Dual center tap
schottky rectifier designed for high frequency Switched Mode Supplies. Power
Major Ratings and Characteristics
Characteristics IF(AV) Rectangular waveform VRRM VF @15 Apk, TC = 125°C (per leg) Values 2 X 15 45 0.57 -45 ~ 150 Unit A V V °C
Features
HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT
TJ range
2
TO-220AB
TO-3P
Base Common Cathode
3 1 2 1 2 3
Anode Common Cathode
2
Anode
1
3
TO-220FPAB
TO-3PF
3
1
2
1 2
Common Cathode
3
Anode
2
Anode
1
3
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GMR30H45C V0.1
1
MICROELECTRONICS
A
A
Power Discrete GMR30H45C
HIGH VOLTAGE POWER
SCHOTTKY RECTIFIER
MARKING INFORMATION
TO - 220AB TO - 3P
30H45C
30H45C AYW W
AYW W
A : Assembly Location Y : Year WW : Weekly
ORDERING INFORMATION
Ordering Number Package Shipping
GMR30H45CTB3T GMR30H45CTBF3T GMR30H45CTP3T GMR30H45CTPF3T
TO - 220AB TO - 220FPAB TO - 3P TO - 3PF
50 Unit/ Tube 50 Unit/ Tube 30 Unit/ Tube 30 Unit/ Tube
* For detail Ordering Number identification, please see last page.
GMR30H45C
ABSOLUTE RATINGS (TC = 25°C)
Symbol VRRM IF(AV) Parameter Repetitive peak reverse voltage Maximum average forward rectified current per diode per device Value 45 15 30 275 -45 to + 150 Unit V A
IFSM Tj, Tstg
Peak forward surge current 8.3ms single half sine-wave superimposed on rated...