SFF75N06-28

www.DataSheet4U.com PRELIMINARY SFF75N06-28 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 DESIGNER'S DATA SHEET FEATURES: Rugged construction with poly silicon gate Low RDS (on) and high transconductance Excellent high temperature stability Very fast switching speed Fast recovery and superior dv/dt performance Increased reverse energy capability Low input transfer capacitance for easy paralleling Hermetically sealed surface mount package TX, TXV and Space Level screening available MAXIMUM RATINGS CHARACTERISTIC Drain to Source Voltage Drain to Gate Voltage (RGS = 1.0 mS) Gate to Source Voltage Continuous Drain Current @ TC = 25oC Operating and Storage Temperature Thermal Resistance, Junction to Case (All Four) Total Device Dissipation @ TC = 25 oC SYMBOL VDS VDG VGS ID Top & Tstg R 2 JC PD 30 AMP 1/ 60 VOLTS 25mS N-CHANNEL POWER MOSFET 28 PIN CLCC VALUE 100 60 ±20 30 -55 to +150 3.5 35 UNIT Volts Volts Volts Amps o C o C/W Watts PACKAGE OUTLINE: 28 PIN CLCC PIN OUT: SOURCE: 1, 15 - 28 DRAIN: 5 - 11 GATE: 2, 3, 13, 14 NOTE: All drain/source pins must be connected on the PC board in order to maximize current carrying capability and to minimize RDS (on) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0001A www.DataSheet4U.com PRELIMINARY SFF75N06-28 SOLID STATE DEVICES, IN...