SFF50N20Z

www.DataSheet4U.com PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Av. * La Mirada, Ca 90670 Phone: (562) 404-7855 * Fax: (562) 404-1773 SFF50N20M SFF50N20Z 50 AMPS 200 VOLTS 0.055 S N-CHANNEL POWER MOSFET TO-254 (M) TO-254Z (Z) DESIGNER'S DATA SHEET FEATURES: • Rugged construction with polysilicon gate • Low RDS (on) and high transconductance • Excellent high temperature stability • Very fast switching speed • Fast recovery and superior dv/dt performance • Increased reverse energy capability • Low input and transfer capacitance for easy paralleling • Hermetically sealed package • TX, TXV, and Space Level screening available • Replaces: IXTH50N20 Types MAXIMUM RATINGS CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case Total Device Dissipation CASE OUTLINE: TO-254 (Sufix M) @ TC = 25oC @ TC = 55oC SYMBOL VDS VGS ID Top & Tstg R2 JC PD VALUE 200 ±20 50 -55 to +150 0.83 150 114 o UNIT Volts Volts Amps o C C/W Watts CASE OUTLINE: TO-254Z (Sufix Z) NOTE: All specifications are subject to change without notification. SCDs for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00129E www.DataSheet4U.com SFF50N20M SFF50N20Z PRELIMINARY SOLID STATE DEVICES, INC. 14830 Valley View Av. * La Mirada, Ca 90670 Phone: (562) 404-7855 * Fax: (562) 404-1773 ELECTRICAL CHARACTERISTICS @ TJ =25oC (Unless Otherwise Specified) RATING Drain to S...