SFF20P10J

www.DataSheet4U.com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com SFF20P10J 20 AMP /100 Volts 200 mΩ P-Channel MOSFET Features: Rugged construction with polysilicon gate Low ON-resistance and high transconductance Excellent high temperature stability Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching replacement for IRF9140 types TX, TXV, S-Level screening available DESIGNER’S DATA SHEET TO-257 Maximum Ratings Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (package limited) Max. Avalanche current Repetitive Avalanche Energy Single Pulse Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) PACKAGE OUTLINE: TO-257 (J) PINOUT: PIN 1: DRAIN PIN 2: SOURCE PIN 3: GATE Symbol VDSS VGS @ TC = 25ºC @ TC = 100ºC @ L= 0.1 mH @ L= 0.1 mH @ L= 0.1 mH @ TC = 25ºC ID1 ID2 IAR EAR EAS PD TOP & TSTG R0JC Value -100 ±20 20 11 20 12.5 500 100 -55 to +150 1.25 Units V V A A mJ mJ W ºC ºC/W SUFFIX JDB SUFFIX JUB NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0012A DOC www.DataSheet4U.com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.c...