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IRGS6B60K

International Rectifier
Part Number IRGS6B60K
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Aug 17, 2007
Detailed Description com PD - 94575A INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Techn...
Datasheet PDF File IRGS6B60K PDF File

IRGS6B60K
IRGS6B60K

Overview
com PD - 94575A INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
C IRGB6B60K IRGS6B60K IRGSL6B60K VCES = 600V IC = 7.
0A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
n-channel VCE(on) typ.
= 1.
8V TO-220AB IRGB6B60K D2Pak IRGS6B60K TO-262 IRGSL6B60K Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage ...


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