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PD - 94575A
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient.
C
IRGB6B60K IRGS6B60K IRGSL6B60K
VCES = 600V IC = 7.0A, TC=100°C
G E
tsc > 10µs, TJ=150°C
Benefits
• Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation.
n-channel
VCE(on) typ. = 1.8V
TO-220AB IRGB6B60K
D2Pak IRGS6B60K
TO-262 IRGSL6B60K
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Max.
600 13 7.0 26 26 ± 20 90 36 -55 to +150 300 (0.063 in. (1.6mm) from case)
Units
V A
V W
°C
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Wt Junction-to-Case - IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Junction-to-Ambient (PCB Mount, steady state) Weight
Min.
––– ––– ––– ––– –––
Typ.
––– 0.50 ––– ––– 1.44
Max.
1.4 ––– 62 40 –––
Units
°C/W
g
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IRG/B/S/SL6B60K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
∆V(BR)CES/∆TJ
VCE(on) VGE(th)
∆VGE(th)/∆TJ
gfe ICES IGES
Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 ––– Temperature Coeff. of Breakdown Voltage ––– 0.3 Collector-to-Emitter Saturation Voltage 1.5 1.80 ––– 2.20 Gate Threshold Voltage 3.5 4.5 Temperature Coeff. of Threshold Voltage ––– -10 Forward Transconductance ––– 3.0 Zero Gate Voltage Collector Current ––– 1.0 ––– 200 Gate-to-Emitter Leakage Current ––– –––
Max. Units Conditions ––– V VGE = 0V, IC = 500µA ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C) 2.20 V IC = 5.0A, VGE = 15V 2.50 IC = 5.0A,VGE = 15V, TJ = 150°C 5.5 V VCE = VGE, IC = 250µA ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C) ––– S VCE = 50V, IC = 5.0A, PW=80µs 150 µA VGE = 0V, VCE = 600V 500 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V
Ref.Fig.
5, 6,7 8,9,10 8,9,10 11
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operting Area Short Circuit Safe Operting Area Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– IC = 5.0A ––– nC VCC = 400V ––– VGE = 15V 210 µJ IC = 5.0A, VCC = 400V 245 VGE = 15V,R G = 100Ω, L =1.4mH 455 Ls = 150nH TJ = 25°C 34 IC = 5.0A, VCC = 400V 26 VGE = 15V, RG = 100Ω L =1.4mH 230 ns Ls = 150nH, TJ = 25°C 22 260 IC = 5.0A, VCC = 400V 300 µJ VGE = 15V,R G = 100Ω, L =1.4mH 560 Ls = 150nH TJ = 150°C 37 IC = 5.0A, VCC = 400V 26 VGE = 15V, RG = 100Ω L =1.4mH 255 ns Ls = 150nH, TJ = 150°C 27 ––– VGE = 0V ––– pF VCC = 30V ––– f = 1.0MHz TJ = 150°C, IC = 26A, Vp =600V FULL SQUARE VCC = 500V, VGE =+15V to 0V,RG = 100Ω µs TJ = 150°C, Vp =600V, RG = 100Ω 10 ––– ––– VCC = 360V, VGE = +15V to 0V Typ. 18.2 1.9 9.2 110 135 245 25 17 215 13.2 150 190 340 28 17 240 18 290 34 10
Ref.Fig.
17 CT1 CT4
CT4
CT4 12,14
WF1WF2
13, 15 CT4 WF1 WF2 16 4 CT2 CT3 WF3
Note to are on page 13
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IRG/B/S/SL6B60K
15 100 90 80 10
Ptot (W) IC (A)
70 60 50 40 30 20 10
5
0 0 20 40 60 80 100 120 140 160 T C (°C)
0 0 20 40 60 80 100 120 140 160 T C (°C)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
100
100
10 10 µs
IC (A)
IC A)
10
1 100 µs DC 1ms 0.1 1 10 100 VCE (V) 1000 10000
1
0 10 100 1000
VCE (V)
Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 150°C
Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V
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IRG/B/S/SL6B60K
20 18 16 14
ICE (A)
20 VGE VGE VGE VGE VGE = 18V = 15V = 12V = 10V = 8.0V
ICE (A)
18 16 14 12 10 8 6 4 2 0
12 10 8 6 4 2 0 0
VGE VGE VGE VGE VGE
= 18V = 15V = 12V = 10V = 8.0V
1
2
3 VCE (V)
4
5
6
0
1
2
3 VCE (V)
4
5
6
Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs
Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs
20 18 16 14
ICE (A)
12 10 8 6 4 2 0 0
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
1
2
3 VCE (V)
4
5
6
Fig. 7 - Typ. IGBT Output Characterist.