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IRGB6B60K Dataheets PDF



Part Number IRGB6B60K
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGB6B60K DatasheetIRGB6B60K Datasheet (PDF)

www.DataSheet4U.com PD - 94575A INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. C IRGB6B60K IRGS6B60K IRGSL6B60K VCES = 600V IC = 7.0A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220A.

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www.DataSheet4U.com PD - 94575A INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. C IRGB6B60K IRGS6B60K IRGSL6B60K VCES = 600V IC = 7.0A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220AB IRGB6B60K D2Pak IRGS6B60K TO-262 IRGSL6B60K Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current  Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. 600 13 7.0 26 26 ± 20 90 36 -55 to +150 300 (0.063 in. (1.6mm) from case) Units V A V W °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Wt Junction-to-Case - IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount‚ Junction-to-Ambient (PCB Mount, steady state)ƒ Weight Min. ––– ––– ––– ––– ––– Typ. ––– 0.50 ––– ––– 1.44 Max. 1.4 ––– 62 40 ––– Units °C/W g www.irf.com 1 8/18/04 www.DataSheet4U.com IRG/B/S/SL6B60K Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 ––– Temperature Coeff. of Breakdown Voltage ––– 0.3 Collector-to-Emitter Saturation Voltage 1.5 1.80 ––– 2.20 Gate Threshold Voltage 3.5 4.5 Temperature Coeff. of Threshold Voltage ––– -10 Forward Transconductance ––– 3.0 Zero Gate Voltage Collector Current ––– 1.0 ––– 200 Gate-to-Emitter Leakage Current ––– ––– Max. Units Conditions ––– V VGE = 0V, IC = 500µA ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C) 2.20 V IC = 5.0A, VGE = 15V 2.50 IC = 5.0A,VGE = 15V, TJ = 150°C 5.5 V VCE = VGE, IC = 250µA ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C) ––– S VCE = 50V, IC = 5.0A, PW=80µs 150 µA VGE = 0V, VCE = 600V 500 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Ref.Fig. 5, 6,7 8,9,10 8,9,10 11 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operting Area Short Circuit Safe Operting Area Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– IC = 5.0A ––– nC VCC = 400V ––– VGE = 15V 210 µJ IC = 5.0A, VCC = 400V 245 VGE = 15V,R G = 100Ω, L =1.4mH 455 Ls = 150nH TJ = 25°C „ 34 IC = 5.0A, VCC = 400V 26 VGE = 15V, RG = 100Ω L =1.4mH 230 ns Ls = 150nH, TJ = 25°C 22 260 IC = 5.0A, VCC = 400V 300 µJ VGE = 15V,R G = 100Ω, L =1.4mH 560 Ls = 150nH TJ = 150°C „ 37 IC = 5.0A, VCC = 400V 26 VGE = 15V, RG = 100Ω L =1.4mH 255 ns Ls = 150nH, TJ = 150°C 27 ––– VGE = 0V ––– pF VCC = 30V ––– f = 1.0MHz TJ = 150°C, IC = 26A, Vp =600V FULL SQUARE VCC = 500V, VGE =+15V to 0V,RG = 100Ω µs TJ = 150°C, Vp =600V, RG = 100Ω 10 ––– ––– VCC = 360V, VGE = +15V to 0V Typ. 18.2 1.9 9.2 110 135 245 25 17 215 13.2 150 190 340 28 17 240 18 290 34 10 Ref.Fig. 17 CT1 CT4 CT4 CT4 12,14 WF1WF2 13, 15 CT4 WF1 WF2 16 4 CT2 CT3 WF3 Note  to „ are on page 13 2 www.irf.com www.DataSheet4U.com IRG/B/S/SL6B60K 15 100 90 80 10 Ptot (W) IC (A) 70 60 50 40 30 20 10 5 0 0 20 40 60 80 100 120 140 160 T C (°C) 0 0 20 40 60 80 100 120 140 160 T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 100 100 10 10 µs IC (A) IC A) 10 1 100 µs DC 1ms 0.1 1 10 100 VCE (V) 1000 10000 1 0 10 100 1000 VCE (V) Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 150°C Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V www.irf.com 3 www.DataSheet4U.com IRG/B/S/SL6B60K 20 18 16 14 ICE (A) 20 VGE VGE VGE VGE VGE = 18V = 15V = 12V = 10V = 8.0V ICE (A) 18 16 14 12 10 8 6 4 2 0 12 10 8 6 4 2 0 0 VGE VGE VGE VGE VGE = 18V = 15V = 12V = 10V = 8.0V 1 2 3 VCE (V) 4 5 6 0 1 2 3 VCE (V) 4 5 6 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs 20 18 16 14 ICE (A) 12 10 8 6 4 2 0 0 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 1 2 3 VCE (V) 4 5 6 Fig. 7 - Typ. IGBT Output Characterist.


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